We demonstrate InGaN violet light-emitting superluminescent diodes with large spectral width suitable for applications i......

相比于第三代半导体材料碳化硅（SiC）和氮化镓（GaN），氧化镓（Ga2O3）具有禁带宽度更大、击穿电场更强、吸收截止边更短、生长成本更低等优点......

A simple semi-empirical model for radiative and Auger recombination constants is suggested, accounting for hole localiza......

We demonstrate the first commercial production–ready white light-emitting diodes (LEDs) for the general illumination ma......